DMP2023UFDF d atasheet number: ds37249 rev. 4 - 2 1 of 7 www.diodes.com january 2015 ? diodes incorporated DMP2023UFDF 20v p-channel enhanc ement mode mosfet product summary v (br)dss r ds(on) max i d max t a = +25c -20v 27m ? @ v gs = -4.5v -7.6a 32m ? @ v gs = -2.5v -6.7a 50m ? @ v gs = -1.8v -5.2a 90m ? @ v gs = -1.5v -3.9a description this mosfet is designed to mi nimize the on-state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal for high-efficiency po wer management applications. ? battery management application ? power management functions ? dc-dc converters features ? 0.6mm profile ? ideal for low profile applications ? pcb footprint of 4mm 2 ? low gate threshold voltage ? fast switching speed ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) mechanical data ? case: u-dfn2020-6 (type f) ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish ? nipdau over copper leadframe. solderable per mil-std-202, method 208 ? weight: 0.007 grams (approximate) ordering information (note 4) part number marking reel size (inches) quantity per reel DMP2023UFDF-7 3f 7 3,000 DMP2023UFDF-13 3f 13 10,000 notes: 1. no purposely added lead. fully eu directiv e 2002/95/ec (rohs) & 2011/6 5/eu (rohs 2) compliant. 2. see http://www.diodes.com for more in formation about diodes incorpor ated?s definitions of halogen- and antimony-free, "gree n" and lead-free. 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm br omine, <900ppm chlorine (<1500ppm t otal br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http://www.diodes.com/p roducts/packages.html. marking information u-dfn2020-6 date code key year 2014 2015 2016 2017 2018 2019 2020 2021 code b c d e f g h i month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d pin out internal schematic 3f = product type marking code ym = date code marking y = year (ex: b = 2014) m = month (ex: 9 = september) u-dfn2020-6 bottom view 3f y m bottom view top view d s g e4
DMP2023UFDF d atasheet number: ds37249 rev. 4 - 2 2 of 7 www.diodes.com january 2015 ? diodes incorporated DMP2023UFDF maximum ratings (@t a = +25c, unless otherwise specified.) characteristic symbol value units drain-source voltage v dss -20 v gate-source voltage v gss 8 v continuous drain current (note 6) v gs = -4.5v steady state t a = +25c t a = +70c i d -7.6 -6.1 a t<5s t a = +25c t a = +70c i d -9.5 -7.6 a pulsed drain current (10 s pulse, duty cycle = 1%) i dm -40 a continuous source-drain diode current t a = +25c i s -2 a avalanche current (note 7) l = 0.1mh i as - 23 a repetitive avalanche energy (note 7) l = 0.1mh e as 27 mj thermal characteristics characteristic symbol value units total power dissipation (note 5) t a = +25c p d 0.73 w t a = +70c 0.47 thermal resistance, junction to ambient (note 5) steady state r ja 171 c/w t<5s 112 total power dissipation (note 6) t a = +25c p d 2.03 w t a = +70c 1.30 thermal resistance, junction to ambient (note 6) steady state r ja 62 c/w t<5s 40 thermal resistance, junction to case (note 6) steady state r jc 9.3 operating and storage temperature range t j, t stg -55 to +150 c electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 8) drain-source breakdown voltage bv dss -20 ? ? v v gs = 0v, i d = -250 a zero gate voltage drain current t j = +25c i dss ? ? -1 a v ds = -20v, v gs = 0v gate-source leakage i gss ? ? 100 na v gs = 5v, v ds = 0v on characteristics (note 8) gate threshold voltage v gs ( th ) -0.4 ? -1.0 v v ds = v gs , i d = -250 a static drain-source on-resistance r ds(on) ? ? 27 m ? v gs = -4.5v, i d = -7.0a ? 32 v gs = -2.5v, i d = -5.0a ? 50 v gs = -1.8v, i d = -3.0a ? 90 v gs = -1.5v, i d = -1.0a diode forward voltage v sd ? -0.8 -1.2 v v gs = 0v, i s = -1.0a dynamic characteristics (note 9) input capacitance c iss ? 1837 ? pf v ds = -15v, v gs = 0v, f = 1.0mhz output capacitance c oss ? 131 ? reverse transfer capacitance c rss ? 115 ? gate resistance r g ? 14.8 ? ? v ds = 0v, v gs = 0v, f = 1mhz total gate charge (v gs = -4.5v) q g ? 27 ? nc v ds = -15v, v gs = -4.5v, i d = -4.0a gate-source charge q g s ? 2.8 ? gate-drain charge q g d ? 3.1 ? turn-on delay time t d ( on ) ? 5.8 ? ns v ds = -15v, v gs = -4.5v, r g = 1 ? , i d = -4.0a turn-on rise time t r ? 19.3 ? turn-off delay time t d ( off ) ? 168.5 ? turn-off fall time t f ? 77.3 ? reverse recovery time t r r ? 46.5 ? ns i f = -1.0a, di/dt = 100a/ s reverse recovery charge q r r ? 33.8 ? nc i f = -1.0a, di/dt = 100a/ s notes: 5. device mounted on fr-4 substrate pc board, 2oz copper, with minimum recommended pad layout. 6. device mounted on fr-4 substrate pc board, 2oz copper, with 1inch square copper plate. 7. i as and e as rating are based on low frequency and duty cycles to keep t j = +25c. 8. short duration pulse test used to minimize self-heating effect. 9. guaranteed by design. not subject to product testing.
DMP2023UFDF d atasheet number: ds37249 rev. 4 - 2 3 of 7 www.diodes.com january 2015 ? diodes incorporated DMP2023UFDF v , drain -source voltage (v) ds figur e 1 typical output char acter istics i , d r a i n c u r r e n t ( a ) d 0 5 10 15 20 00.5 11.5 22.5 3 v = -1.0v gs v = -1.2v gs v = -1.5v gs v = -1.8v gs v = -2.5v gs v = -3.0v gs v = -4.0v gs v = -4.5v gs v = -8.0v gs v , gate-source voltage (v) gs figure 2 typical transfer characteristics i , d r a i n c u r r ent ( a ) d 0 5 10 15 20 25 3 0 0 0.5 1 1.5 2 2.5 v = -5.0v ds t = -55c a t = 150c a t = 25c a t = 85c a t = 125c a i , drain source current (a) d figure 3 typical on-resistance vs. dr ain cur rent and gate voltage r , d r a i n- s o u r c e o n- r e s i s t a n c e () ds(on) ? 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0 5 10 15 20 v = -4.5v gs v = -2.5v gs v = -1.8v gs v = -1.5v gs v , gate-source voltage (v) gs figure 4 typical transfer characteristics r , d r a i n - s o u r c e o n - r es i s t a n c e ( ) ds(o n) ? 0 0.02 0.04 0.06 0.08 0.1 012 3 4567 8 i = -1.0a d i = -7.0a d i = -5.0a d i = -3.0a d i , drain current (a) d figure 5 typical on-resistance vs. dr ain curr ent and tem perature r , d r ai n - s o u r c e o n - r e s i s t a n c e ( ) ds(o n) ? t = -55c a 0 0.005 0.01 0.015 0.02 0.025 0.03 0.035 0.04 0.045 0.0 5 05 10 15 20 v = -4.5v gs t = 25c a t = 85c a t = 125c a t = 150c a t , junction temperature ( c) j ? figure 6 on-resistance variation with temperature r , drain - sour c e ds(o n) on-re sis tance (norma lize d) 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -50 -25 0 25 50 75 100 125 150 v = -2.5v gs i = -5a d v = -4.5v gs i = -20a d
DMP2023UFDF d atasheet number: ds37249 rev. 4 - 2 4 of 7 www.diodes.com january 2015 ? diodes incorporated DMP2023UFDF t , junction temperature ( c) j ? figure 7 on-resistance variation with temperature r , d r a i n- s o u r c e on- r e s i s t an c e () ds(o n) ? 0 0.005 0.01 0.015 0.02 0.025 0.03 0.035 0.04 0.045 0.0 5 -50 -25 0 25 50 75 100 125 150 v = -4.5v gs i = -20a d v = -2.5v gs i = -5a d t , junction temperature (c) j figure 8 gate threshold var iation vs. ambient tem per atur e v , g a te th r eshol d volt a ge (v ) gs (t h) 0 0.2 0.4 0.6 0.8 1 -50 -25 0 25 50 75 100 125 150 i = -1ma d i = -250a d v , source-drain voltage (v) sd figure 9 diode forward voltage vs. current i , s o u r c e c u r r ent ( a ) s 0 5 10 15 20 25 30 0 0.3 0.6 0.9 1.2 1.5 t = 25c a t = -55c a t = 150c a t = 85c a t = 125c a v , drain-source voltage (v) ds figur e 10 typical dr ain- sour ce leakage cur r ent vs. voltage i , l e ak ag e c u r r e n t ( n a ) dss 0.1 1 10 100 1000 10000 100000 02468101214161820 t = 25c a t = 85c a t = 125c a t = 150c a c , jun c t i o n c a p a c i t a n c e (p f ) t -v , drain-source voltage (v) ds figure 11 typical junction capacitance 10 100 1000 10000 02468101214161820 f = 1mhz c rss c oss c iss q , total gate charge (nc) g figur e 12 gate- char ge char acter istics v , g a te-s o u r c e v o lt a g e (v ) gs 0 2 4 6 8 0 102030 4050 v = -15v ds i = -4a d
DMP2023UFDF d atasheet number: ds37249 rev. 4 - 2 5 of 7 www.diodes.com january 2015 ? diodes incorporated DMP2023UFDF t1, pulse duration times (sec) figure 14 transient thermal resistance r(t) , transie nt thermal res istance 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 r (t) = r(t) * r thja thja r = 184c/w thja duty cycle, d = t1/ t2 single pulse d = 0.005 d = 0.9 d = 0.7 d = 0.5 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 v , drain-source voltage (v) ds figure 13 soa, safe operation area i , d r a i n c u r r en t (a ) d 0.01 0.1 1 10 100 0.1 1 10 100 dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w r ds(on) limit ed t = 150c j(max) t = 25c a v = 4.5v gs single pulse dut on 1 * mrp board
DMP2023UFDF d atasheet number: ds37249 rev. 4 - 2 6 of 7 www.diodes.com january 2015 ? diodes incorporated DMP2023UFDF package outline dimensions please see ap02002 at http://www.diodes.com/dat asheets/ap02002.pdf for the latest version. suggested pad layout please see ap02001 at http://www.diodes.com/dat asheets/ap02001.pdf for the latest version. u-dfn2020-6 (type f) dim min max typ a 0.57 0.63 0.60 a1 0 0.05 0.03 a3 - - 0.15 b 0.25 0.35 0.30 d 1.95 2.05 2.00 d2 0.85 1.05 0.95 d3 0.33 0.43 0.38 e 0.65 bsc e2 0.863 bsc e 1.95 2.05 2.00 e2 1.05 1.25 1.15 e3 0.65 0.75 0.70 l 0.225 0.325 0.275 z 0.20 bsc z1 0.110 bsc all dimensions in mm dimensions value (in mm) c 0.650 x 0.400 x1 0.480 x2 0.950 x3 1.700 y 0.425 y1 0.800 y2 1.150 y3 1.450 y4 2.300 p i n 1 y 4 y 2 y x c x 3 y 1 x 1 x 2 y 3 d d 2 e e b l e 2 a a 3 s e a t i n g p l a n e a 1 z 4 x e 2 e 3 d 3 z 1
DMP2023UFDF d atasheet number: ds37249 rev. 4 - 2 7 of 7 www.diodes.com january 2015 ? diodes incorporated DMP2023UFDF important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability ari sing out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability w hatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of t his document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when prope rly used in accordance with instructions for use provided in the labeling can be reasonably expected to re sult in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2015, diodes incorporated www.diodes.com
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